Aluminium nitride ceramic substrates offer high thermal conductivity, high strength, low dielectric loss and a smooth surface. Thermal conductivity reaches 170/200/230 W/(m·K) at 25°C, dielectric constant is 8.8±0.2 at 10 GHz, loss tangent is 3×10⁻⁴, dielectric strength is ≥15 kV/mm, volume resistivity is 10¹⁴ Ω·cm and the coefficient of thermal expansion is 4.5×10⁻⁶/°C (25–300°C), giving good matching with semiconductor chip materials. It is an ideal heat-dissipating and insulating substrate for high-power and high-frequency devices. With full-process capability covering tape casting, sintering, lapping, polishing, dicing and drilling, annual capacity is 1 million pieces; typical thicknesses include 0.127/0.15/0.2/0.25/0.38/0.5 mm and outline dimensions and surface finish are fully customisable.
